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參數資料
| 型號： | FS4VS-12 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH-SPEED SWITCHING USE |
| 中文描述： | 高速開關使用 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 41K |
| 代理商： | FS4VS-12 |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS4VS-12
HIGH-SPEED SWITCHING USE
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
V
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
600
±
30
—
—
2
—
—
1.8
—
—
—
—
—
—
—
—
—
—
—
—
—
3
2.0
4.0
3.0
600
65
10
15
15
60
30
1.5
—
—
—
±
10
1
4
2.6
5.2
—
—
—
—
—
—
—
—
2.0
1.39
I
D
= 1mA, V
GS
= 0V
I
G
=
±
100
μ
A, V
DS
= 0V
V
GS
=
±
25V, V
DS
= 0V
V
DS
= 600V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 2A, V
GS
= 10V
I
D
= 2A, V
GS
= 10V
I
D
= 2A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 200V, I
D
= 2A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 2A, V
GS
= 0V
Channel to case
100
80
60
40
20
0
200
150
100
50
0
5
4
3
2
1
00
4
8
12
16
20
T
C
= 25°C
Pulse Test
V
GS
= 20V
10V
8V
6V
5V
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2 3 5 710
1
2 3 5 710
2
2 3 5 710
3
3
2
2
T
C
= 25°C
Single Pulse
tw=10μs
100μs
1ms
10ms
DC
10
8
6
4
2
00
10
20
30
40
50
P
D
= 90W
T
C
= 25°C
Pulse Test
V
GS
= 20V
10V
8V
5V
6V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
PERFORMANCE CURVES
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