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參數資料
| 型號： | FS6M12653RTCYDT |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 穩壓器 |
| 英文描述： | Fairchild Power Switch(FPS) |
| 中文描述： | 21.2 A SWITCHING REGULATOR, PZFM5 |
| 封裝： | TO-220F, 5 PIN |
| 文件頁數： | 3/10頁 |
| 文件大小： | 549K |
| 代理商： | FS6M12653RTCYDT |
FS6M12653RTC
3
Electrical Characteristics (SFET part)
(Ta=25
°
C unless otherwise specified)
Note:
1. Pulse test : Pulse width
≤
300
μ
S, duty 2%
2.
Parameter
Drain-Source Breakdown Voltage
Symbol
BV
DSS
Condition
Min.
650
-
Typ.
-
-
Max.
-
200
Unit
V
μ
A
V
GS
=0V, I
D
=250
μ
A
V
DS
=650V, V
GS
=0V
V
DS
=520V
V
GS
=0V, T
C
=125
°
C
V
GS
=10V, I
D
=1.8A
V
DS
=50V, I
D
=1.8A
Zero Gate Voltage Drain Current
I
DSS
-
-
300
μ
A
Static Drain-Source On Resistance
(1)
Forward Transconductance
(2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
0.73
-
1820
185
32
38
120
200
100
0.9
-
-
-
-
-
-
-
-
S
V
GS
=0V, V
DS
=25V,
f = 1MHz
pF
V
DD
=325V, I
D
=6.5A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=6.5A,
V
DS
=520V (MOSFET
Switching time are
Essentially independent of
Operating temperature)
nS
Qg
-
60
-
nC
Qgs
Qgd
-
-
10
30
-
-
S
1
R
---
=
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