- 您現在的位置：買賣IC網 > PDF目錄375917 > FS7VS-5 (POWEREX INC) Nch POWER MOSFET HIGH-SPEED SWITCHING USE PDF資料下載
參數資料
| 型號： | FS7VS-5 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | 7 A, 250 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220S, 3 PIN |
| 文件頁數： | 2/4頁 |
| 文件大小： | 47K |
| 代理商： | FS7VS-5 |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7VS-5
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
I
D
= 1mA, V
GS
= 0V
I
G
=
±
100
μ
A, V
DS
= 0V
V
GS
=
±
25V, V
DS
= 0V
V
DS
= 250V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 3A, V
GS
= 10V
I
D
= 3A, V
GS
= 10V
I
D
= 3A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 150V, I
D
= 3A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 3A, V
GS
= 0V
Channel to case
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
V
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
250
±
30
—
—
2
—
—
2.3
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.63
1.90
3.5
370
80
16
15
22
50
26
1.5
—
—
—
±
10
1
4
0.80
2.40
—
—
—
—
—
—
—
—
2.0
1.67
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
PERFORMANCE CURVES
100
80
60
40
20
0
200
150
100
50
0
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
2 3 5 710
1
2 3 5 710
2
10
0
2 3 5 710
3
5
3
2
T
C
= 25°C
Single Pulse
tw=10μs
100μs
1ms
10ms
DC
20
16
12
8
4
00
10
20
30
40
50
P
D
=
75W
T
C
= 25°C
Pulse Test
V
GS
= 20V
6V
5V
7V
10V
10
8
6
4
2
00
4
8
12
16
20
P
D
=
75W
T
C
= 25°C
Pulse Test
6V
5V
V
GS
= 20V 10V 7V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
相關PDF資料 |
PDF描述 |
|---|---|
| FS8160 | 1.1 GHz/1.1 GHz Dual Phase-locked Loop IC |
| FS8853-13PI | 300mA LDO Linear Regulator |
| FS8853-18CA | 300mA LDO Linear Regulator |
| FS8853-18CB | 300mA LDO Linear Regulator |
| FS8853-18CC | 300mA LDO Linear Regulator |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FS-8000 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:MULTI-USER KVM SWITCH |
| FS-80-0-300V | 制造商:Fuji Electric 功能描述: |
| FS800R06KE3_H7E | 制造商:Infineon Technologies AG 功能描述: |
| FS800R07A2E3 | 功能描述:IGBT 模塊 IGBT Module 650V 700A RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FS800R07A2E3BOSA2 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Module N-CH 650V 700A 33-Pin |
發布緊急采購，3分鐘左右您將得到回復。