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參數資料
| 型號： | FSAM15SM60 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | SPM (Smart Power Module) General Description |
| 中文描述： | 掃描探針顯微鏡（智能功率模塊）概述 |
| 文件頁數： | 13/16頁 |
| 文件大小： | 2338K |
| 代理商： | FSAM15SM60 |
2003 Fairchild Semiconductor Corporation
F
Rev. E, August 2003
Note:
1) It would be recommended that by-pass capacitors for the gating input signals, IN
, IN
, IN
(WL)
, IN
(UH)
, IN
(VH)
and IN
(WH)
should be placed on the SPM pins
and on the both sides of CPU and SPM for the fault output signal, V
FO
, as close as possible.
2) The logic input is compatible with standard CMOS or LSTTL outputs.
3) R
C
/R
C
/R
PF
C
PF
coupling at each SPM input is recommended in order to prevent input/output signals’ oscillation and it should be as close as possible to
each of SPM pins.
Fig. 13. Recommended CPU I/O Interface Circuit
Note:
It would be recommended that the bootstrap diode, D
BS
, has soft and fast recovery characteristics.
Fig. 14. Recommended Bootstrap Operation Circuit and Parameters
CPU
COM
5V-Line
1.2nF
0.47nF
1nF
4.7k
4.7k
,
,
IN
(UL)
IN
(VL)
IN
(WL)
,
,
IN
(UH)
IN
(VH)
IN
(WH)
V
FO
100
100
100
1nF
SPM
2k
R
PF
R
PL
R
PH
C
PF
C
PL
C
PH
15V-Line
20
33uF
0.1uF
470uF
0.1uF
One-Leg Diagram of SPM
Vcc
IN
COM
VB
HO
VS
Vcc
IN
COM
OUT
Inverter
Output
P
N
These Values depend on PWM Control Algorithm
D
BS
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相關代理商/技術參數 |
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|---|---|
| FSAM15SM60A | 功能描述:馬達/運動/點火控制器和驅動器 600V/15A/ SPM2 RoHS:否 制造商:STMicroelectronics 產品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube |
| FSAM20S160 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FSAM20SH60A | 功能描述:IGBT 晶體管 600V/20A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FSAM20SH60A_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:SPMTM (Smart Power Module) |
| FSAM20SL60 | 功能描述:IGBT 晶體管 600V 20A SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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