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參數(shù)資料
| 型號(hào)： | FSB749 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP Low Saturation Transistor |
| 中文描述： | 3000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 29K |
| 代理商： | FSB749 |
FSB749
SuperSOT
TM
-3
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous. Sourced from Process PC.
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
°C
-55 to +150
Operating and Storage Junction Temperature Range
T
J,
T
stg
A
3
Collector Current - Continuous
I
C
V
5
Emitter-Base Voltage
V
EBO
V
35
Collector-Base Voltage
V
CBO
V
25
Collector-Emitter Voltage
V
CEO
Units
FSB749
Parameter
Symbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
A = 25°C unless otherwise noted
°C/W
250
Thermal Resistance, Junction to Ambient
R
θ
JA
mW
500
Total Device Dissipation
P
D
FSB749
Units
Max
Characteristic
Symbol
1999 Fairchild Semiconductor Corporation
fsb749.lwpPrPC revA
F
C
E
B
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