- 您現在的位置：買賣IC網 > PDF目錄375933 > FSF254R (Intersil Corporation) 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs PDF資料下載
參數資料
| 型號： | FSF254R |
| 廠商： | Intersil Corporation |
| 英文描述： | 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 18A條，250V，0.170歐姆，拉德硬，SEGR耐，N溝道功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 45K |
| 代理商： | FSF254R |
3-113
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
June 1998
FSF254D, FSF254R
18A, 250V, 0.170 Ohm, Rad Hard,
SEGR Resistant, N-Channel Power MOSFETs
Features
18A
,
250V
, r
DS(ON)
=
0.170
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
-
15nA
Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for
1E13
Neutrons/cm
2
- Usable to
1E14
Neutrons/cm
2
Formerly available as type TA17658.
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Symbol
Package
TO-254AA
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Commercial
FSF254D1
10K
TXV
FSF254D3
100K
Commercial
FSF254R1
100K
TXV
FSF254R3
100K
Space
FSF254R4
D
G
S
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
D
S
G
File Number
3972.3
相關PDF資料 |
PDF描述 |
|---|---|
| FSF254R1 | 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF254R3 | 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF254R4 | 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF450D | 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF450D1 | 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSF254R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF254R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF254R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF2606 | 制造商:Microsemi Corporation 功能描述:TRANS MOSFET N-CH 26A 3PIN TO-254 - Bulk |
| FSF351D | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:5-PHASE STEPPING SYSTEMS |
發布緊急采購，3分鐘左右您將得到回復。