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參數資料
| 型號： | FSGYC260R3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFET |
| 中文描述： | 56 A, 200 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, LCC-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 82K |
| 代理商： | FSGYC260R3 |
1
TM
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Star*Power is a trademark of Intersil Corporation.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright Intersil Corporation 2000
FSGYC260R
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFET
Intersil Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low r
DS(ON)
and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100K RADs while maintaining the
guaranteed performance for SEE (Single Event Effects)
which the Intersil FS families have always featured.
The Intersil family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
r
DS(ON)
while exhibiting SEE capability at full rated voltage
up to an LET of 37. Star*Power Gold FETS have been
optimized for SEE and Gate Charge combining SEE
performance to 80% of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-S-19500.
Formerly available as type TA45231W.
Features
56A, 200V, r
DS(ON)
= 0.033
UIS Rated
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 5V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
Photo Current
- 17nA Per-RAD (Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Symbol
Packaging
SMD2
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Engineering Samples
FSGYC260D1
100K
TXV
FSGYC260R3
100K
Space
FSGYC260R4
TM
D
G
S
Data Sheet
May 2000
File Number
4851.1
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| FSGYC260R4 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFET |
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| FSGYE230D1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFET |
| FSGYE230R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFET |
| FSGYE230R3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSGYC260R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFET |
| FSGYC264D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 44A I(D) | SMT |
| FSGYC264R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 44A I(D) | SMT |
| FSGYC264R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 44A I(D) | SMT |
| FSGYE033D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | SMT |
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