- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄375934 > FSJ055D3 (HARRIS SEMICONDUCTOR) 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | FSJ055D3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, METAL, TO-254AA, 3 PIN |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大小： | 325K |
| 代理商： | FSJ055D3 |
4
Typical Performance Curves
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
LET = 60MeV/mg/cm
2
, RANGE = 31
μ
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
40
0
0
-10
-15
-20
-25
-5
V
GS
(V)
V
D
10
20
30
50
60
70
TEMP = 25
o
C
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
1
2
3
1 -
2 -
3 -
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E
-4
1E
-5
1E
-6
30
100A
30A
1E
-7
1E
-3
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
40
30
10
100
90
80
70
60
50
100
10
1
1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
0.1
300
500
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100ms
1ms
100
μ
s
10ms
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
r
D
,
O
250ms PULSE TEST
V
GS
= 12V, I
D
= 54A
FSJ055D, FSJ055R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSJ055R1 | 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ055R3 | 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ055R | 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ055R4 | 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ160D | 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSJ055R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ055R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ055R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ055R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ1-50A | 制造商:ANDREWS 功能描述:COAXIAL CABLE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。