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參數資料
| 型號： | FSJ9055R3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| 中文描述： | 55 A, 60 V, 0.029 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, METAL, TO-254AA, 3 PIN |
| 文件頁數： | 4/8頁 |
| 文件大小： | 66K |
| 代理商： | FSJ9055R3 |
3-224
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
40
30
10
70
60
50
100
10
11
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
500
100
μ
s
1ms
10ms
100ms
200
T
C
= 25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
CHARGE
Q
GD
Q
G
V
G
Q
GS
-12V
2.5
2.0
1.5
1.0
0.5
0.0-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= -12V, I
D
= 35A
N
θ
J
)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
10
-3
10
-2
10
-1
10
0
10
1
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
FSJ9055D, FSJ9055R
相關PDF資料 |
PDF描述 |
|---|---|
| FSJ9055D | 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9055D3 | 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9055R | 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9055R4 | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0709-6 00; No. of Positions: 26; Connector Type: Panel; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 2; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 85; General Description: In-line adapter; Both ends male contacts; Pin contact |
| FSJ9160 | 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSJ9055R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9160 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9160D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9160D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9160D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
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