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參數資料
| 型號： | FSL130R3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 8 A, 100 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 45K |
| 代理商： | FSL130R3 |
3-29
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
June 1998
FSL130D, FSL130R
8A, 100V, 0.230 Ohm, Rad Hard,
SEGR Resistant, N-Channel Power MOSFETs
Features
8A, 100V, r
DS(ON)
= 0.230
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 1.5nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Formerly available as type TA17636.
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Symbol
Package
TO-205AF
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Commercial
FSL130D1
10K
TXV
FSL130D3
100K
Commercial
FSL130R1
100K
TXV
FSL130R3
100K
Space
FSL130R4
D
G
S
S
G
D
File Number
4031.3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSL130R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
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| FSL136HRL | 功能描述:電源開關 IC - 配電 Green Mode Fairchild Power Switch (FPS) RoHS:否 制造商:Fairchild Semiconductor 輸出端數量: 開啟電阻（最大值）: 開啟時間（最大值）: 關閉時間（最大值）: 工作電源電壓: 電源電流（最大值）: 最大工作溫度: 安裝風格: 封裝 / 箱體: |
| FSL136HRLX | 制造商:Fairchild Semiconductor Corporation 功能描述:Power Switch 3A T/R 制造商:Fairchild Semiconductor Corporation 功能描述:FPS FOR LOW POWER - Tape and Reel 制造商:Fairchild Semiconductor Corporation 功能描述:IC FPS SWITCH PWM/SENSEFET 8LSOP 制造商:Fairchild Semiconductor Corporation 功能描述:Power Switch ICs - Power Distribution Green Mode Fairchild Power Switch (FPS) 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / Green Mode Fairchild Power Switch |
| FSL136MR | 功能描述:電流型 PWM 控制器 FPS FOR LOW POWER RoHS:否 制造商:Texas Instruments 開關頻率:27 KHz 上升時間: 下降時間: 工作電源電壓:6 V to 15 V 工作電源電流:1.5 mA 輸出端數量:1 最大工作溫度:+ 105 C 安裝風格:SMD/SMT 封裝 / 箱體:TSSOP-14 |
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