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參數資料
型號: FSL9130D3
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: CAP 1000UF 200V ELECT TS-HB
中文描述: 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
封裝: HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN
文件頁數: 5/8頁
文件大小: 45K
代理商: FSL9130D3
3-177
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
1
1
10
40
0.1
STARTING T
J
= 150
o
C
IF R = 0
t
AV
= (L) (IAS) / (1.3 RATED BV
DSS
- V
DD
)
IF R
0
t
AV
= (L/R) ln [(IAS*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 25
o
C
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
= -12V
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSL9130D, FSL9130R
相關PDF資料
PDF描述
FSL9130R1 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSL9130R3 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSL9130R4 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSL9130D 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
相關代理商/技術參數
參數描述
FSL9130D4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
FSL9130R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSL9130R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSL9130R3 制造商:International Rectifier 功能描述:FSL9130R3 - Rail/Tube
FSL9130R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
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