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參數(shù)資料
型號(hào)： FSL913A0R1
廠商： INTERSIL CORP
元件分類(lèi)： JFETs
英文描述： 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
中文描述： 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁(yè)數(shù)： 3/8頁(yè)
文件大小： 57K
代理商： FSL913A0R1
4-3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
I
SD
= 7A
I
SD
= 7A, dI
SD
/dt = 100A/
μ
s
-0.6
-
-1.8
V
Reverse Recovery Time
-
-
160
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= -80V
V
GS
= -12V, I
D
= 7A
V
GS
= -12V, I
D
= 4A
-100
-
V
Gate to Source Threshold Volts
(Note 3)
-2.0
-6.0
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
Zero Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
-2.31
V
Drain to Source On Resistance
(Notes 1, 3)
-
0.300
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= -12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
-100
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating Area
SEESOA
Ni
26
43
20
Br
37
36
10
-100
Br
37
36
15
-80
Br
37
36
20
-50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
-120
-100
-80
-60
-40
-20
0
0
10
15
20
25
5
V
D
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
V
GS
(V)
-300
-100
-10
L
DRAIN SUPPLY (V)
-1000
ILM = 10A
300A
1E-4
1E-5
1E-6
-30
100A
30A
1E-3
1E-7
FSL913A0D, FSL913A0R
相關(guān)PDF資料
PDF描述
FSL9230D1 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSL9230R1 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSL9230R3 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSL9230R4 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSL9230D 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSL913A0R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSL913A0R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSL913AOD1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 7A I(D) | TO-205AF
FSL913AOD3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 7A I(D) | TO-205AF
FSL913AOR1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 7A I(D) | TO-205AF
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