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參數資料
| 型號： | FSL9230R1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| 中文描述： | 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN |
| 文件頁數： | 4/8頁 |
| 文件大小： | 46K |
| 代理商： | FSL9230R1 |
3-182
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
4
3
2
1
10
1
-1
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10
-100
-600
50
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
100ms
1ms
100
μ
s
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
-12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= -12V, I
D
= 2A
N
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
T
θ
J
)
0.001
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
SINGLE PULSE
0.01
0.1
0.01
0.02
0.2
0.1
0.05
0.5
FSL9230D, FSL9230R
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PDF描述 |
|---|---|
| FSL9230R3 | 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSL9230R4 | 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSL9230D | 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSL9230D3 | 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSL9230R | 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSL9230R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSL9230R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSL923A0D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSL923A0D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSL923A0D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
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