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參數資料
| 型號： | FSPJ264F |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應管) |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET（抗輻射?溝道馬鞍山場效應管） |
| 文件頁數： | 5/8頁 |
| 文件大小： | 82K |
| 代理商： | FSPJ264F |
5
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Performance Curves
Unless Otherwise Specified
(Continued)
N
q
)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
SINGLE PULSE
0.01
0.02
0.1
0.2
0.5
10
-3
10
-2
10
-1
10
0
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
P
DM
t
1
t
2
300
100
10
1
0.001
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
I
A
,
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
t
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
IF R = 0
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
Test Circuits and Waveforms
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
FSPJ264R, FSPJ264F
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|---|---|
| FSPJ264R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應管) |
| FSPL230D1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSPJ264F3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 43A I(D) | TO-254AA |
| FSPJ264F4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 43A I(D) | TO-254AA |
| FSPJ264R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 43A I(D) | TO-254AA |
| FSPJ264R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 43A I(D) | TO-254AA |
| FSPL130F3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-205AF |
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