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參數(shù)資料
| 型號(hào)： | FSPL234F3 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-205AF |
| 中文描述： | 晶體管| MOSFET的| N溝道| 250V五（巴西）直| 7A條（?。﹟至205AF |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 82K |
| 代理商： | FSPL234F3 |
1
TM
File Number
4881
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Star*Power is a trademark of Intersil Corporation.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright
Intersil Corporation 2000
FSPL234R, FSPL234F
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Intersil Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
system designer both extremely low r
DS(ON)
and Gate
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300K
RADs while maintaining the guaranteed performance for
Single Event Effects (SEE) which the Intersil FS families
have always featured.
The Intersil portfolio of Star*Power FETs includes a family of
devices in various voltage, current and package styles. The
Star*Power family consists of Star*Power and Star*Power
Gold products. Star*Power FETs are optimized for total dose
and r
DS(ON)
performance while exhibiting SEE capability at
full rated voltage up to an LET of 37. Star*Power Gold FETs
have been optimized for SEE and Gate Charge providing
SEE performance to 80% of the rated voltage for an LET of
82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-S-19500.
Formerly available as type TA45216W.
Features
7A, 250V, r
DS(ON)
= 0.245
UIS Rated
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 100% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
Photo Current
- 4.0nA Per-RAD (Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Symbol
Packaging
TO-205AF
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Engineering samples
FSPL234D1
100K
TXV
FSPL234R3
100K
Space
FSPL234R4
300K
TXV
FSPL234F3
300K
Space
FSPL234F4
TM
D
G
S
S
G
D
Data Sheet
June 2000
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| FSPL234F | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管) |
| FSPL234R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管) |
| FSPS134R4 | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 16A I(D) | TO-257AA |
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| FSPS234F3 | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 11A I(D) | TO-257AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSPL234F4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-205AF |
| FSPL234R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-205AF |
| FSPL234R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-205AF |
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| FSP-LCD6-CR | 制造商:L COM 功能描述:FSP PNL 6 LC DPX CPL CERM 12 P |
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