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參數資料
| 型號： | FSPYC260D1 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, LCC-3 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 83K |
| 代理商： | FSPYC260D1 |
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
V
SD
t
rr
Q
RR
TEST CONDITIONS
MIN
-
-
TYP
-
-
4.6
MAX
1.2
375
UNITS
V
ns
μ
C
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 58A
I
SD
= 58A, dI
SD
/dt = 100A/
μ
s
Electrical Specifications up to 300K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0, V
DS
= 160V
V
GS
= 12V, I
D
= 58A
V
GS
= 12V, I
D
= 37A
MIN
100K RAD
200
2.0
-
-
-
-
MAX
MIN
300K RAD
200
1.5
MAX
UNITS
V
V
nA
μ
A
V
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. In situ Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
-
4.5
100
25
1.91
0.031
4.5
100
50
2.26
0.035
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
SEESOA
ENVIRONMENT
(NOTE 5)
TYPICAL LET
(MeV/mg/cm)
37
37
60
60
82
82
APPLIED
V
GS
BIAS
(V)
-10
-15
-2
-8
0
-5
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
200
160
200
160
160
120
ION
SPECIES
Br
Br
I
I
Au
Au
TYPICAL
RANGE (
μ
)
36
36
32
32
28
28
Single Event Effects Safe Operating Area
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
120
80
40
0
0
-20
V
GS
(V)
160
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
V
D
TEMP = 25
o
C
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
200
240
-4
-8
-12
-16
V
D
LET = 82 GOLD
LET = 60 IODINE
LET = 37 BROMINE
240
200
160
120
80
40
0
-30
0
-5
-10
-15
-20
-25
V
GS
(V)
FSPYC260R, FSPYC260F
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| FSPYC260F | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應管) |
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相關代理商/技術參數 |
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|---|---|
| FSPYC260F | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYC260F3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYC260F4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYC260R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYC260R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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