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參數(shù)資料
| 型號(hào)： | FSPYE234F3 |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, LCC-3 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 79K |
| 代理商： | FSPYE234F3 |
4
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
Performance Curves
Unless Otherwise Specified
(Continued)
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
10
2
4
6
8
10
1
1
0.1
10
100
1000
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
AREA MAY BE
LIMITED BY r
DS(ON)
OPERATION IN THIS
100
μ
s
1ms
10ms
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 6A
10
8
6
4
2
0
40
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
V
GS
= 6 V
30
20
10
V
GS
= 8V
V
GS
= 10V
V
GS
= 12V
V
GS
= 14V
DESCENDING ORDER
FSPYE234R, FSPYE234F
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