- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375938 > FSPYE234F4 (INTERSIL CORP) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | FSPYE234F4 |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, LCC-3 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 79K |
| 代理商： | FSPYE234F4 |
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
V
SD
t
rr
Q
RR
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
1.9
MAX
1.2
310
-
UNITS
V
ns
μ
C
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 9A
I
SD
= 9A, dI
SD
/dt = 100A/
μ
s
Electrical Specifications up to 300K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0, V
DS
= 200V
V
GS
= 12V, I
D
= 9A
V
GS
= 12V, I
D
= 6A
MIN
100K RAD
250
2.0
-
-
-
-
MAX
MIN
300K RAD
-
1.5
MAX
UNITS
V
V
nA
μ
A
V
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
-
-
4.5
100
25
1.98
0.215
4.5
100
50
2.97
0.270
-
-
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
SEESOA
ENVIRONMENT
(NOTE 5)
TYPICAL LET
(MeV/mg/cm)
37
37
60
60
82
82
APPLIED
V
GS
BIAS
(V)
-10
-15
-2
-8
0
-5
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
250
200
200
150
150
100
ION SPECIES
Br
Br
I
I
Au
Au
TYPICAL
RANGE (
μ
)
36
36
32
32
28
28
Single Event Effects Safe Operating Area
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
120
80
40
00
-20
V
GS
(V)
160
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
V
D
200
240
-4
-8
-12
TEMP = 25
o
C
-16
280
V
D
LET = 82 GOLD
LET = 60 IODINE
LET = 37 BROMINE
240
200
160
120
80
40
0
-30
0
-5
-10
-15
-20
-25
V
GS
(V)
280
FSPYE234R, FSPYE234F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSPYE234R3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234R4 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110D1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSPYE234R | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234R3 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234R4 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPZ1255F040A | 制造商:Panduit Corp 功能描述:12 FIBER PLENUM OM4 FEMALE MTP-FEMALE MT - Bulk 制造商:Panduit Corp 功能描述:12 FIBER PLENUM OM4 FEMALE MT MTP-FEMALE |
| FSPZ1255F045A | 制造商:Panduit Corp 功能描述:12 FIBER PLENUM OM4 FEMALE MTP-FEMALE MT - Bulk 制造商:Panduit Corp 功能描述:12 FIBER PLENUM OM4 FEMALE MT MTP-FEMALE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。