- 您現在的位置：買賣IC網 > PDF目錄375938 > FSPYE234F (Intersil Corporation) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs PDF資料下載
參數資料
| 型號： | FSPYE234F |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET |
| 文件頁數： | 6/8頁 |
| 文件大小： | 79K |
| 代理商： | FSPYE234F |
6
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent)
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
Gate to Source Leakage Current
I
GSS
V
GS
=
±
30V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80% Rated Value
Drain to Source On Resistance
r
DS(ON)
Gate Threshold Voltage
V
GS(TH)
I
D
= 1.0mA
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Test Circuits and Waveforms
(Continued)
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
TEST CONDITIONS
MAX
UNITS
nA
μ
A
V
±
20 (Note 7)
±
25 (Note 7)
±
20% (Note 8)
±
20% (Note 8)
T
C
= 25
o
C at Rated I
D
Screening Information
TEST
JANTXV EQUIVALENT
V
GS(PEAK)
= 20V, L = 0.1mH; Limit = 30A
t
H
= 10ms; V
H
= 25V; I
H
= 1A; LIMIT = 74mV
V
GS
= 45V, t = 250
μ
s
Optional
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
All Delta Parameters Listed in the Delta Tests
and Limits Table
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 160 hours
10%
MIL-S-19500, Group A, Subgroup 2
JANS EQUIVALENT
Unclamped Inductive Switching
Thermal Response
Gate Stress
Pind
Pre Burn-In Tests (Note 9)
V
GS(PEAK)
= 20V, L = 0.1mH; Limit = 30A
t
H
= 10ms; V
H
= 25V; I
H
= 1A; LIMIT = 74mV
V
GS
= 45V, t = 250
μ
s
Required
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
All Delta Parameters Listed in the Delta Tests
and Limits Table
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 240 hours
5%
MIL-S-19500, Group A,
Subgroups 2 and 3
Steady State Gate
Bias (Gate Stress)
Interim Electrical Tests (Note 9)
Steady State Reverse
Bias (Drain Stress)
PDA
Final Electrical Tests (Note 9)
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
SYMBOL
SOA
V
SD
TEST CONDITIONS
V
DS
= 200V, t = 10ms
t
H
= 100ms; V
H
= 25V; I
H
= 1A
MAX
0.30
165
UNITS
A
mV
Safe Operating Area
Thermal Impedance
FSPYE234R, FSPYE234F
相關PDF資料 |
PDF描述 |
|---|---|
| FSPYE234F3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234F4 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234R3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234R4 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSPYE234F3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234F4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
發布緊急采購，3分鐘左右您將得到回復。