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參數資料
| 型號： | FSPYE234R |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應管) |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET（抗輻射?溝道馬鞍山場效應管） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 79K |
| 代理商： | FSPYE234R |
1
TM
File Number
4873
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation.
Copyright
Intersil Corporation 2000
FSPYE234R, FSPYE234F
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Intersil Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low r
DS(ON)
and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
FETs combine this electrical capability with total dose
radiation hardness up to 300K RADs while maintaining the
guaranteed performance for Single Event Effects (SEE)
which the Intersil FS families have always featured.
The Intersil portfolio of Star*Power FETs includes a family of
devices in various voltage, current and package styles. The
Star*Power family consists of Star*Power and Star*Power
Gold products. Star*Power FETs are optimized for total dose
and r
DS(ON)
performance while exhibiting SEE capability at
full rated voltage up to an LET of 37. Star*Power Gold FETs
have been optimized for SEE and Gate Charge providing
SEE performance to 80% of the rated voltage for an LET of
82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-S-19500.
Formerly available as type TA45216W.
Features
9A, 250V, r
DS(ON)
= 0.215
UIS Rated
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 100% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
Photo Current
- 4.0nA Per-RAD (Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Symbol
Packaging
SMD.5
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Engineering samples
FSPYE234D1
100K
TXV
FSPYE234R3
100K
Space
FSPYE234R4
300K
TXV
FSPYE234F3
300K
Space
FSPYE234F4
D
G
S
Data Sheet
June 2000
相關PDF資料 |
PDF描述 |
|---|---|
| FSPYE234D1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234F | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234F3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234F4 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234R3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSPYE234R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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| FSPZ1255F045A | 制造商:Panduit Corp 功能描述:12 FIBER PLENUM OM4 FEMALE MTP-FEMALE MT - Bulk 制造商:Panduit Corp 功能描述:12 FIBER PLENUM OM4 FEMALE MT MTP-FEMALE |
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