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參數(shù)資料
| 型號： | FSR1110D1 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 1 A, 100 V, 0.68 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB |
| 封裝： | CERAMIC, DIP-14 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大小： | 164K |
| 代理商： | FSR1110D1 |
9
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
FSR1110D, FSR1110R
MO-036AB
14 LEAD CERAMIC SIDE LEADED DUAL IN LINE PACKAGE (DIP)
e
M
A
A
1
c
b
E
b
1
H
1
L
1
e
1
INDEX MARK
SEATING PLANE
e
2
1
14
8
7
D
L
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.290
0.325
7.37
8.25
-
A
1
b
0.280
0.310
7.12
7.87
-
0.015
0.021
0.38
0.53
-
b
1
c
0.038
0.060
0.97
1.52
-
0.008
0.012
0.21
0.30
-
D
0.105
0.175
2.67
4.44
-
E
0.730
0.770
18.55
19.55
-
e
0.290
0.325
7.37
8.25
3
e
1
e
2
H
1
L
0.100 Typ.
2.54 Typ.
2
0.600 BSC
15.24 BSC
2
0.010
-
0.25
-
-
0.125
0.175
3.18
4.44
-
L
1
M
0.025
0
o
0.055
15
o
0.64
0
o
1.39
15
o
-
3
NOTES:
1. These dimensions are within allowable dimensions of Rev. A of
JEDEC MO-036AB outline dated 4-81.
2. Position of leads to be measured a maximum of 0.030 (0.76mm)
from bottom of Seating Plane.
3. Applies to spread of leads prior to installation.
4. Controlling dimension: Inch.
5. Revision 1 dated 1-00.
相關(guān)PDF資料 |
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| FSR1110R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110R3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110R4 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSR1110R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR120 | 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:Axial Leaded PTC FSR Series |
| FSR120F | 制造商:RFE 制造商全稱:RFE international 功能描述:STRAP TYPE PPTC FSR Series |
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