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參數資料
| 型號： | FSR1110D |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET |
| 文件頁數： | 5/9頁 |
| 文件大?。?/td> | 164K |
| 代理商： | FSR1110D |
5
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Typical Performance Curves
(Continued)
T
1
P
1
.73P
2
.73P
3
.73P
4
T
2
T
3
T
4
.73P
1
.73P
1
.73P
1
P
2
P
3
P
4
.73P
2
.73P
2
.73P
3
.73P
3
.73P
4
.73P
4
=
* [R
0JA
]
THERMAL MATRIX
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
T
θ
J
)
0.001
0.01
0.1
0.1
10
10
2
10
3
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
SINGLE PULSE
0.01
0.02
0.2
0.05
0.5
10
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
1
0.01
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
IF R = 0
FSR1110D, FSR1110R
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| FSR1110R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSR1110D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR120 | 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:Axial Leaded PTC FSR Series |
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