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參數資料
| 型號： | FSS130D3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 11 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
| 文件頁數： | 8/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | FSS130D3 |
3-78
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
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FAX: (32) 2.724.22.05
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ASIA
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Taiwan Limited
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Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
FSS130D, FSS130R
TO-257AA
3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE
Q
D
L
H
1
b
e
e
1
A
1
E
A
J
1
0.065 R TYP.
P
L
1
b
1
1
2
3
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.190
0.200
4.83
5.08
-
A
1
b
0.035
0.045
0.89
1.14
-
0.025
0.035
0.64
0.88
2, 3
b
1
D
0.060
0.090
1.53
2.28
-
0.645
0.665
16.39
16.89
-
E
0.410
0.420
10.42
10.66
-
e
0.100 TYP
2.54 TYP
4
e
1
H
1
J
1
L
0.200 BSC
5.08 BSC
4
0.230
0.250
5.85
6.35
-
0.110
0.130
2.80
3.30
4
0.600
0.650
15.24
16.51
-
L
1
P
-
0.035
-
0.88
-
0.140
0.150
3.56
3.81
-
Q
0.113
0.133
2.88
3.37
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. B of
JEDEC TO-257AA dated 9-88.
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
4. Position of lead to be measured 0.150 inches (3.81mm) from bottom
of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-S-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical
operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound
shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’
compounds.
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| FSS130R | 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS130R1 | 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS13A0R3 | 30V N-Channel PowerTrench MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSS130D4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 11A I(D) | TO-257AA |
| FSS130R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS130R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS130R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS130R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
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