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參數(shù)資料
| 型號： | FSS130R |
| 廠商： | Intersil Corporation |
| 英文描述： | 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 第11A，100V的，0.210歐姆，拉德硬，SEGR耐，N溝道功率MOSFET |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | FSS130R |
3-74
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
150
100
50
0
T
C
, CASE TEMPERATURE (
o
C)
-50
0
10
8
6
4
2
12
14
10
1
1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
300
60
100
μ
s
1ms
10ms
100ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 7A
N
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
T
θ
J
)
0.001
0.01
0.1
10
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
0.02
0.01
0.1
0.05
0.5
0.2
FSS130D, FSS130R
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSS130R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS130R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS130R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS131 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Load Switching Applications |
| FSS132 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Load Switching Applications |
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