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參數資料
| 型號： | FSS239 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Load Switching Applications |
| 中文描述： | 負荷開關應用 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 28K |
| 代理商： | FSS239 |
FSS239
No.6582-1/4
Features
Low ON resistance.
2.5V drive.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6582
FSS239
Package Dimensions
unit : mm
2185
[FSS239]
52600 TS IM TA-2977
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Load Switching Applications
1
4
5
8
4
0
6
0.2
5.0
0.595
1.27
1
0
1
0.43
1 : No Contact
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
20
±
10
7
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (1000mm
2
0.8mm)
52
1.8
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=
±
8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=7A
ID=7A, VGS=4V
ID=2A, VGS=2.5V
20
V
μ
A
μ
A
V
S
m
m
1
±
10
1.3
0.4
10.9
15.5
24
29
Static Drain-to-Source On-State Resistance
32
42
Marking : S239 Continued on next page.
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