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參數資料
| 型號： | FSS23A0D3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle |
| 中文描述： | 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 文件頁數： | 3/8頁 |
| 文件大小： | 56K |
| 代理商： | FSS23A0D3 |
4-3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
I
SD
= 9A
I
SD
= 9A, dI
SD
/dt = 100A/
μ
s
0.6
-
1.8
V
Reverse Recovery Time
-
-
400
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= 160V
V
GS
= 12V, I
D
= 9A
V
GS
= 12V, I
D
= 6A
200
-
V
Gate to Source Threshold Volts
(Note 3)
1.5
4.0
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
Zero Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
3.12
V
Drain to Source On Resistance
(Notes 1, 3)
-
0.330
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
200
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating Area
SEESOA
Ni
26
43
-20
Ni
37
36
-5
200
Br
37
36
-10
160
Br
37
36
-15
100
Br
37
36
-20
40
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
120
80
40
0
0
-10
-15
-20
-25
-5
V
GS
(V)
V
D
160
200
TEMP = 25
o
C
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
FSS23A0D, FSS23A0R
相關PDF資料 |
PDF描述 |
|---|---|
| FSS23A0R1 | 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSS23A4D | RECTIFIER BRIDGE 3A 800V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX |
| FSS23A4D1 | RECTIFIER BRIDGE 6A 50V 125A-ifsm 1.1V-vf 10uA-ir PBPC3 200/BOX |
| FSS23A4R | 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS23A4D3 | RECTIFIER BRIDGE 6A 200V 125A-ifsm 1.1V-vf 10uA-ir PBPC3 200/BOX |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSS23A0R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSS23A0R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSS23A0R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSS23A0R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSS23A4D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
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