欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FSS430D1
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
中文描述: 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
封裝: HERMETIC SEALED, METAL, TO-257AA, 3 PIN
文件頁數: 3/8頁
文件大?。?/td> 46K
代理商: FSS430D1
3-91
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 3A
0.6
-
1.8
V
Reverse Recovery Time
t
rr
I
SD
= 3A, dI
SD
/dt = 100A/
μ
s
-
-
400
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= 400V
V
GS
= 12V, I
D
= 3A
V
GS
= 12V, I
D
= 2A
500
-
V
Gate to Source Threshold Volts
(Note 3)
1.5
4.0
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
Zero Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
8.51
V
Drain to Source On Resistance
(Notes 1, 3)
-
2.70
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating
Area
SEESOA
Ni
26
43
-15
500
Ni
26
43
-20
450
Br
37
36
-5
500
Br
37
36
-10
400
Br
37
36
-15
100
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
0
0
-10
-15
-20
-25
-5
V
GS
(V)
V
D
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
300
200
100
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
400
500
600
TEMP = 25
o
C
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
FSS430D, FSS430R
相關PDF資料
PDF描述
FSS430D3 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS430R1 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS430R3 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS9130D 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
相關代理商/技術參數
參數描述
FSS430D3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS430D4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3A I(D) | TO-257AA
FSS430R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS430R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS430R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
主站蜘蛛池模板: 广德县| 正安县| 扎兰屯市| 宿州市| 房山区| 昭苏县| 临清市| 册亨县| 祁阳县| 玉山县| 临西县| 正安县| 沧州市| 花垣县| 清水河县| 普定县| 温宿县| 铜鼓县| 清镇市| 台东市| 襄樊市| 永靖县| 西青区| 永新县| 浦北县| 嘉义县| 长白| 乐平市| 定陶县| 乐业县| 平安县| 临潭县| 泸水县| 琼结县| 南丹县| 阿巴嘎旗| 旺苍县| 乐昌市| 共和县| 滁州市| 唐山市|