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參數(shù)資料
| 型號： | FSS430R1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 46K |
| 代理商： | FSS430R1 |
3-92
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
2.0
1.0
3.0
4.0
10
1
1
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.01
1000
30
100
100
μ
s
10ms
100ms
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 2A
N
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
T
θ
J
)
0.001
0.01
0.1
10
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
0.02
0.01
0.1
0.05
0.5
0.2
FSS430D, FSS430R
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相關代理商/技術參數(shù) |
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| FSS430R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS430R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS52 | 制造商:FOX 制造商全稱:FOX 功能描述:HCMOS 5x3.2mm 2.5V SMD Oscillator |
| FSS-55-0001 | 制造商:Schurter Electronic Components 功能描述:FSS 2-55-1/0.5 - Bulk |
| FSS-55-0002 | 制造商:Schurter Electronic Components 功能描述:FSS 2-55-2/0.5 - Bulk |
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