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參數資料
型號: FSS9130R
廠商: Intersil Corporation
英文描述: 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
中文描述: 第6A,- 100V的,0.660歐姆,拉德硬,SEGR性,P通道功率MOSFET
文件頁數: 5/8頁
文件大小: 44K
代理商: FSS9130R
3-201
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
1
1
10
40
0.1
IF R = 0
t
AV
= (L) (IAS) / (1.3 RATED BV
DSS
- V
DD
)
IF R
0
t
AV
= (L/R) ln [(IAS*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
= -12V
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSS9130D, FSS9130R
相關PDF資料
PDF描述
FSS9130D1 CAPACITOR 820UF 200V ELECT TSHA
FSS9130D3 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSS9130R1 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSS9130R3 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSS9130R4 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
相關代理商/技術參數
參數描述
FSS9130R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSS9130R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSS9130R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSS913A0D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
FSS913A0D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
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