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參數資料
型號: FSS913A0D
廠商: Intersil Corporation
英文描述: 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
中文描述: 10A條,- 100V的,0.280歐姆,抗輻射,抗SEGR,P通道功率MOSFET
文件頁數: 5/8頁
文件大?。?/td> 56K
代理商: FSS913A0D
4-5
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
1
0.01
1
10
40
0.1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
IF R = 0
t
AV
= (L) (IAS) / (1.3 RATED BV
DSS
- V
DD
)
IF R
0
t
AV
= (L/R) ln [(IAS*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 150
o
C
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
= -12V
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSS913A0D, FSS913A0R
相關PDF資料
PDF描述
FSS913A0R 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
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FSS913A0D1 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
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相關代理商/技術參數
參數描述
FSS913A0D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
FSS913A0D3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
FSS913A0R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
FSS913A0R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
FSS913A0R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
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