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參數(shù)資料
| 型號： | FSS913A0R1 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| 中文描述： | 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 56K |
| 代理商： | FSS913A0R1 |
4-1
File Number
4451.3
FSS913A0D, FSS913A0R
10A, -100V 0.280 Ohm, Radiation
Hardened, SEGR Resistant, P-Channel
Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Formerly available as type TA17796.
Features
10A, -100V, r
DS(ON)
= 0.280
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with V
DS
up
to 80% of Rated Breakdown and V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 1.5nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Symbol
Package
TO-257AA
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Commercial
FSS913A0D1
10K
TXV
FSS913A0D3
100K
Commercial
FSS913A0R1
100K
TXV
FSS913A0R3
100K
Space
FSS913A0R4
G
D
S
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
G
SD
Data Sheet
June 1999
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSS913A0R3 | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSS913A0D | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSS913A0R | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSS913A0R4 | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSS913A0D1 | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSS913A0R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSS913A0R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSS913AOD1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-257AA |
| FSS913AOD3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-257AA |
| FSS913AOR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-257AA |
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