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參數資料
| 型號： | FSS9230R |
| 廠商： | Intersil Corporation |
| 英文描述： | 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| 中文描述： | 第4A，- 200V的電壓，1.60歐姆，拉德硬，SEGR性，P通道功率MOSFET |
| 文件頁數： | 4/8頁 |
| 文件大小： | 45K |
| 代理商： | FSS9230R |
3-206
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
4
5
3
2
1
100
10
1
-1
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10
-100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100ms
10ms
1ms
100
μ
s
-500
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
-12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= -12V, I
D
= 3A
N
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
T
θ
J
)
0.001
0.01
0.1
10
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
0.02
0.01
0.1
0.05
0.5
0.2
FSS9230D, FSS9230R
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| FSS9230R3 | 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSS9230R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSS9230R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSS9230R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSS923A0D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSS923A0D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
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