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參數資料
| 型號： | FSTJ9055R |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| 中文描述： | 輻射，SEGR硬化抗P通道功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 72K |
| 代理商： | FSTJ9055R |
1
TM
File Number
4756.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation.
Copyright
Intersil Corporation 2000
FSTJ9055D, FSTJ9055R
Radiation Hardened, SEGR Resistant
P-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Immunity to Single Event Effects (SEE) is combined with
100K RADs of total dose hardness to provide devices which
are ideally suited to harsh space environments. The dose
rate and neutron tolerance necessary for military
applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Formerly available as type TA17750T.
Features
62A, -60V, r
DS(ON)
= 0.023
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 6nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications for 3E13
Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Symbol
Packaging
TO-254AA
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Commercial
FSTJ9055D1
10K
TXV
FSTJ9055D3
100K
Commercial
FSTJ9055R1
100K
TXV
FSTJ9055R3
100K
Space
FSTJ9055R4
G
D
S
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
Data Sheet
June 2000
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSTJ9055R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSTJ9055R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSTJ9055R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
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