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參數(shù)資料
| 型號： | FSTYC9055D1 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| 中文描述： | 64 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, LCC-3 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 74K |
| 代理商： | FSTYC9055D1 |
7
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Pre and Post RAD Read and Record Data
Class S - Equivalents
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
F. Group A
- Attributes Data Sheet
G. Group B
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
I. Group D
- Attributes Data Sheet
- Pre and Post Radiation Data
FSTYC9055D, FSTYC9055R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSTYC9055D3 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSTYC9055R | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSTYC9055R1 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSTYC9055R3 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSTYC9055R4 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSTYC9055D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSTYC9055R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSTYC9055R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSTYC9055R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSTYC9055R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
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