- 您現在的位置：買賣IC網 > PDF目錄375946 > FSX017WF (FUJITSU LTD) GIGATRUE 550 CAT6 PATCH 7 FT, SNAGLESS, PURPLE PDF資料下載
參數資料
| 型號： | FSX017WF |
| 廠商： | FUJITSU LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | GIGATRUE 550 CAT6 PATCH 7 FT, SNAGLESS, PURPLE |
| 中文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, CASE WF, 4 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 94K |
| 代理商： | FSX017WF |
1
Edition 1.2
July 1999
FSX017WF
General Purpose GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
Ptot
Tstg
Tch
12
-5
1.0
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain - source operating voltage (VDS) should not exceed 8 volts.
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with
gate resistance of 2000
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS
35
55
75
-
50
-
-0.7
-
-1.2
-1.7
2.5
-
-5.0
-
-
-
10.5
-
VDS = 3V, IDS = 2.7mA
VDS = 3V, IDS = 10mA
f = 8GHz
f = 4GHz
f = 8GHz
f = 12GHz
f = 4GHz
f = 8GHz
f = 12GHz
VDS = 8V,
IDS = 0.7IDSS
VDS = 8V,
IDS = 0.7IDSS
Channel to Case
G.C.P.: Gain Compression Point
VDS = 3V, IDS = 27mA
VDS = 3V, VGS = 0V
IGS = -2.7
μ
A
mA
mS
V
dB
-
21.5
21.5
20.5
15.0
11.0
7.5
-
-
-
-
-
-
dBm
dBm
dBm
dB
dB
dB
20.5
-
-
10.0
-
-
120
150
°
C/W
dB
V
gm
Vp
VGSO
NF
Gas
Output Power at 1 dB G.C.P.
P1dB
Power Gain at 1 dB G.C.P.
G1dB
Thermal Resistance
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
CASE STYLE: WF
DESCRIPTION
The FSX017WF is a general purpose GaAs FET designed for medium
power applications up to the 12GHz. These devices have a wide
dynamic range and are suitable for use in medium power, wide band,
linear drive amplifiers or oscillators.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
Medium Power Output: P1dB=21.5dB (Typ.)@8.0GHz
High Power Gain: G1dB=11dB (Typ.)@8.0GHz
Hermetic Metal/Ceramic Package
Proven Reliability
相關PDF資料 |
PDF描述 |
|---|---|
| FSYA150D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYA150D1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYA150D3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYA150R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYA150R1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSX017X | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:GaAs FET & HEMT Chips |
| FSX017X/001 | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs FET Chip, Waffle4 |
| FSX027WF | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:Small Signal GaAs FETs, Medium Power, 10dB, 8GHz, 77mA, Bulk |
| FSX027X | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs FETs, Chip, X-band Amplifier, 10dB, 8GHz, 77mA, Waffle1 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs FETs, Chip, X-band Amplifier, 10dB, 8GHz, 77mA, Waffle3 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs FETs, Chip, X-band Amplifier, 10dB, 8GHz, 77mA, Waffle2 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs FETs, Chip, X-band Amplifier, 10dB, 8GHz, 77mA, Waffle4 |
| FSX327 | 功能描述:晶體 7.0x1.5MM 32.768KHz 12.5pf RoHS:否 制造商:AVX 頻率:26 MHz 容差: 頻率穩定性:50 PPM 負載電容:8 pF 端接類型:SMD/SMT 封裝 / 箱體:1210 (3225 metric) 工作溫度范圍:- 40 C to + 150 C 尺寸:2.5 mm W x 3.2 mm L x 0.85 mm H 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。