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參數(shù)資料
| 型號： | FSX027WF |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | General Purpose GaAs FET |
| 中文描述： | 通用砷化鎵場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 108K |
| 代理商： | FSX027WF |
1
Edition 1.2
July 1999
FSX027WF
General Purpose GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
V
W
°
C
°
C
VGS
PT
TSTG
TCH
VDS
Rating
Condition
Unit
12
-5
1.5
Tc = 25
°
C
-65 to 175
175
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 8 volts.
2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with
gate resistance of 1000
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS
70
110
150
-
100
-
-0.7
-
-1.2
-1.7
2.5
-
-5.0
-
-
-
9.5
-
VDS = 3V, IDS = 5.4mA
VDS = 3V, IDS = 30mA
f = 8GHz
f = 4GHz
f = 8GHz
f = 12GHz
f = 4GHz
f = 8GHz
f = 12GHz
VDS = 8V,
IDS = 0.7IDSS
VDS = 8V,
IDS = 0.7IDSS
Channel to Case
G.C.P.: Gain Compression Point
VDS = 3V, IDS = 54mA
VDS = 3V, VGS = 0V
IGS = -5.4
μ
A
mA
mS
V
dB
-
24.5
24.5
23.5
14.0
10.0
6.5
-
-
-
-
-
-
dBm
dBm
dBm
dB
dB
dB
°
C/W
23.5
-
-
9.0
-
-
70
100
dB
V
gm
Vp
VGSO
NF
Gas
Output Power at 1 dB G.C.P.
P1dB
Power Gain at 1 dB G.C.P.
G1dB
Thermal Resistance
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
CASE STYLE: WF
DESCRIPTION
The FSX027WF is a general purpose GaAs FET designed for medium
power applications up to the 12GHz. These devices have a wide
dynamic range and are suitable for use in medium power, wide band,
linear drive amplifiers or oscillators.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz
High Power Gain: G1dB=10dB(Typ.)@8.0GHz
Hermetic Metal/Ceramic Package
Proven Reliability
相關(guān)PDF資料 |
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| FSX027X | GaAs FET & HEMT Chips |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSX027X | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs FETs, Chip, X-band Amplifier, 10dB, 8GHz, 77mA, Waffle1 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs FETs, Chip, X-band Amplifier, 10dB, 8GHz, 77mA, Waffle3 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs FETs, Chip, X-band Amplifier, 10dB, 8GHz, 77mA, Waffle2 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs FETs, Chip, X-band Amplifier, 10dB, 8GHz, 77mA, Waffle4 |
| FSX327 | 功能描述:晶體 7.0x1.5MM 32.768KHz 12.5pf RoHS:否 制造商:AVX 頻率:26 MHz 容差: 頻率穩(wěn)定性:50 PPM 負(fù)載電容:8 pF 端接類型:SMD/SMT 封裝 / 箱體:1210 (3225 metric) 工作溫度范圍:- 40 C to + 150 C 尺寸:2.5 mm W x 3.2 mm L x 0.85 mm H 封裝:Reel |
| FSX-DRVR-CFXXXX-P-P1-A | 功能描述:開發(fā)軟件 uC/FS Driver Compact Flash Single Product RoHS:否 制造商:Atollic Inc. 產(chǎn)品:Compilers/Debuggers 用于:ARM7, ARM9, Cortex-A, Cortex-M, Cortex-R Processors |
| FSX-DRVR-CFXXXX-P-P1-B | 制造商:Micrium 功能描述:UC/FS DRIVER: COMPACT FLASH -PRODUCT LINE - Virtual or Non-Physical Inventory (Software & Literature) 制造商:Micrium 功能描述:STACK, UC/FS DRIVER, FOR COMPACT FLASH, PRODLINE, Software Application:Stacks - File Systems, Core Architecture:-, Core Sub-Architecture:-, Supported Families:-, License Model:Product Line , RoHS Compliant: NA |
| FSX-DRVR-CFXXXX-P-P1-C | 制造商:Micrium 功能描述:UC/FS DRIVER: COMPACT FLASH -PLATFORM - Virtual or Non-Physical Inventory (Software & Literature) 制造商:Micrium 功能描述:STACK, UC/FS DRIVER, FOR COMPACT FLASH, PLATFORM, Software Application:Stacks - File Systems, Core Architecture:-, Core Sub-Architecture:-, Supported Families:-, License Model:Processor Platform , RoHS Compliant: NA |
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