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參數(shù)資料
型號: FSYA450R4
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
中文描述: 11 A, 500 V, 0.53 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 5/8頁
文件大小: 56K
代理商: FSYA450R4
4-5
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
100
10
1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
0.1
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
IF R
0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSYA450D, FSYA450R
相關(guān)PDF資料
PDF描述
FSYA9150D Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYA9150D1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYA9150D3 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYA9150R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYA9150R1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSYA9150D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYA9150D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYA9150D3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYA9150DI 制造商:Rochester Electronics LLC 功能描述:- Bulk
FSYA9150R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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