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參數(shù)資料
型號: FSYC055D1
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
中文描述: 70 A, 60 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 5/8頁
文件大小: 49K
代理商: FSYC055D1
5
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
(Continued)
100
10
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
10
500
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
IF R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
I
AS
t
AV
t
P
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
D(ON)
t
R
90%
10%
V
DS
90%
10%
t
F
t
D(OFF)
t
OFF
90%
50%
50%
10%
V
GS
t
ON
PULSE WIDTH
FSYC055D, FSYC055R
相關PDF資料
PDF描述
FSYC055D3 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC055R1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC055R3 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC055R4 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
相關代理商/技術參數(shù)
參數(shù)描述
FSYC055D3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC055R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC055R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC055R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC055R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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