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參數(shù)資料
型號: FSYC160R
廠商: Intersil Corporation
英文描述: Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
中文描述: 抗輻射,抗SEGR,N溝道功率MOSFET
文件頁數(shù): 5/8頁
文件大小: 49K
代理商: FSYC160R
5
Screening Information
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
100
10
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
10
500
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
0
IF R = 0
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
D(ON)
t
R
90%
10%
V
DS
90%
10%
t
F
t
D(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSYC160D, FSYC160R
相關(guān)PDF資料
PDF描述
FSYC160R1 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
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FSYC160R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
FSYC163D Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSYC160R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
FSYC160R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
FSYC160R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
FSYC163D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC163D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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