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參數資料
| 型號： | FSYC260R3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, SMD2, LCC-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 48K |
| 代理商： | FSYC260R3 |
1
July 1998
FSYC260D,
FSYC260R
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Features
46A, 200V, r
DS(ON)
= 0.050
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 17nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Formerly available as type TA17667.
Description
The Discrete Products Operation of Intersil has developed a
series
of
Radiation
Hardened
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environ-
ments. The dose rate and neutron tolerance necessary for
military applications have not been sacrificed.
MOSFETs
specifically
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety
of
voltage,
current and
Numerous packaging options are also available.
on-resistance ratings.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent
of
MIL-S-19500,
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
or
Space
equivalent
of
Symbol
Packaging
SMD-2
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NO./BRAND
10K
Commercial
FSYC260D1
10K
TXV
FSYC260D3
100K
Commercial
FSYC260R1
100K
TXV
FSYC260R3
100K
Space
FSYC260R4
D
G
S
File Number
4549
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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相關代理商/技術參數 |
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|---|---|
| FSYC260R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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| FSYC264D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC264D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC264R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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