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參數(shù)資料
型號(hào): FSYC9055D3
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
中文描述: 59 A, 60 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: CERAMIC, LCC-3
文件頁(yè)數(shù): 5/8頁(yè)
文件大小: 51K
代理商: FSYC9055D3
5
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUI
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
100
10
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
10
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
IF R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
300
0.01
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
= -12V
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSYC9055D, FSYC9055R
相關(guān)PDF資料
PDF描述
FSYC9055R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9055R1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9055R3 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9055R4 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160D Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSYC9055R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9055R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9055R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9055R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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