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參數(shù)資料
| 型號(hào)： | FSYC9160R4 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| 中文描述： | 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, LCC-3 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | FSYC9160R4 |
4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
40
60
-100
10
1-1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10
100
500
T
C
= 25
o
C
100
μ
s
1ms
10ms
-300
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
CHARGE
V
G
Q
GS
BASIC GATE CHARGE WAVEFORM
-12V
Q
GD
Q
G
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= -12V, I
D
= 30A
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.001
0.01
0.1
N
t, RECTANGULAR PULSE DURATION (s)
1
T
θ
J
)
10
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
SINGLE PULSE
10
1
0.05
0.02
0.01
0.5
0.1
0.2
FSYC9160D, FSYC9160R
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| FSYC9160D1 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSYC9260D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT |
| FSYC9260D3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT |
| FSYC9260R1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT |
| FSYC9260R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT |
| FSYC9260R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT |
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