欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): FSYE13A0D1
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
中文描述: 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: CERAMIC, LCC-3
文件頁數(shù): 6/8頁
文件大小: 55K
代理商: FSYE13A0D1
6
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent)
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
±
20 (Note 7)
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80% Rated Value
±
25 (Note 7)
μ
A
Drain to Source On Resistance
r
DS(ON)
T
C
= 25
o
C at Rated I
D
±
20% (Note 8)
Gate Threshold Voltage
V
GS(TH)
I
D
= 1.0mA
±
20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Gate Stress
V
GS
= 30V, t = 250
μ
s
V
GS
= 30V, t = 250
μ
s
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
V
DS
= 80V, t = 10ms
1.16
A
Unclamped Inductive Switching
I
AS
V
GS(PEAK)
= 15V, L = 0.1mH
36
A
Thermal Response
V
SD
t
H
= 10ms; V
H
= 25V; I
H
= 1A
74
mV
Thermal Impedance
V
SD
t
H
= 100ms; V
H
= 25V; I
H
= 1A
165
mV
FSYE13A0D, FSYE13A0R
相關(guān)PDF資料
PDF描述
FSYE13A0D3 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYE23A0D Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYE23A0D1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYE23A0D3 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYE23A0R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSYE13A0D3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYE13A0R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYE13A0R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYE13A0R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYE13A0R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
主站蜘蛛池模板: 日喀则市| 泾阳县| 兴仁县| 云和县| 肥西县| 肇东市| 滁州市| 遂溪县| 谷城县| 大连市| 东山县| 乐都县| 黄陵县| 营山县| 搜索| 湖南省| 和顺县| 乐至县| 吉首市| 灵寿县| 历史| 嘉义市| 房产| 沁源县| 修水县| 中牟县| 大石桥市| 西宁市| 赤水市| 卢龙县| 长垣县| 遵义县| 丰原市| 福安市| 饶阳县| 宜兰县| 京山县| 安龙县| 伊金霍洛旗| 加查县| 木里|