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參數資料
| 型號： | FSYE13A0D3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, LCC-3 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 55K |
| 代理商： | FSYE13A0D3 |
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSYE13A0D, FSYE13A0R
100
100
UNITS
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
12
8
36
±
20
A
A
A
V
42
17
0.33
36
12
36
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
100
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
5.0
V
1.5
-
4.0
V
0.5
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80V,
V
GS
= 0V
-
-
25
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 12A
I
D
= 8A,
V
GS
= 12V
2.32
V
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
0.093
0.160
-
-
0.246
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DD
= 50V, I
D
= 12A,
R
L
=
4.17
, V
GS
= 12V,
R
GS
= 7.5
-
-
15
ns
Rise Time
-
-
70
ns
Turn-Off Delay Time
-
-
35
ns
Fall Time
-
-
30
ns
Total Gate Charge
V
GS
= 0V to 20V
V
GS
= 0V to 12V
V
GS
= 0V to 2V
V
DD
= 50V,
I
D
= 12A
-
-
59
nC
Gate Charge at 12V
-
36
40
nC
Threshold Gate Charge
-
-
1.9
nC
Gate Charge Source
-
6.5
7.8
nC
Gate Charge Drain
-
20
23
nC
Plateau Voltage
I
D
= 12A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
8
-
V
Input Capacitance
-
760
-
pF
Output Capacitance
-
310
-
pF
Reverse Transfer Capacitance
-
110
-
pF
Thermal Resistance Junction to Case
-
-
3.0
o
C/W
FSYE13A0D, FSYE13A0R
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|---|---|
| FSYE23A0D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYE23A0D1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYE23A0D3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYE23A0R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYE23A0R1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSYE13A0R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYE13A0R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYE13A0R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYE13A0R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYE23A0D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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