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參數資料
型號: FSYE430R
廠商: Intersil Corporation
英文描述: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
中文描述: 抗輻射,抗SEGR N溝道功率MOSFET
文件頁數: 8/8頁
文件大小: 58K
代理商: FSYE430R
4-8
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
FSYE430D, FSYE430R
SMD.5
3 PAD CERAMIC LEADLESS CHIP CARRIER
D
1
E
1
E
2
D
2
b
A
D
E
1 - GATE
2 - SOURCE
3 - DRAIN
1
2
3
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.108
0.118
2.74
2.99
-
b
0.090
0.100
2.28
2.54
-
D
0.291
0.301
7.39
7.64
-
D
1
D
2
E
0.281
0.291
7.13
7.39
-
0.145
0.155
3.68
3.93
-
0.395
0.405
10.03
10.28
-
E
1
E
2
0.220
0.230
5.58
5.84
-
0.120
0.130
3.04
3.30
-
NOTES:
1. No current JEDEC outline for this package.
2. Controlling dimension: Inch.
3. Revision 1 dated 3-99.
相關PDF資料
PDF描述
FSYE430R1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYE430R3 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYE430R4 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYE913A0D Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYE913A0D1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
相關代理商/技術參數
參數描述
FSYE430R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYE430R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYE430R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYE913A0D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYE913A0D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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