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參數(shù)資料
| 型號： | FSYE913A0R3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| 中文描述： | 9 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, LCC-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 73K |
| 代理商： | FSYE913A0R3 |
4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
10
2
4
6
8
12
10
1
0.1
I
D
,
-10
-100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
μ
s
10ms
1ms
-300
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-1
T
C
= 25
o
C
100
CHARGE
Q
GD
Q
G
V
G
Q
GS
BASIC GATE CHARGE WAVEFORM
-12V
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
2.5
PULSE DURATION = 250ms, V
GS
= -12V, I
D
= 5A
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.001
0.01
0.1
N
t, RECTANGULAR PULSE DURATION (s)
1
T
θ
J
)
10
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
SINGLE PULSE
0.5
0.02
0.01
0.1
0.05
0.2
10
1
FSYE913A0D, FSYE913A0R
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| FSYE913A0R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
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| FSYE923A0D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYE923A0D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYE923A0R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
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