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參數資料
| 型號： | FSYE923A0R3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| 中文描述： | 6 A, 200 V, 1.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, SMD0.5, LCC-3 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 70K |
| 代理商： | FSYE923A0R3 |
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
I
SD
= 6A
I
SD
= 6A, dI
SD
/dt = 100A/
μ
s
-0.6
-
-1.8
V
Reverse Recovery Time
-
-
180
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= -160V
V
GS
= -12V, I
D
= 6A
V
GS
= -12V, I
D
= 4A
-200
-
V
Gate to Source Threshold Volts
(Note 3)
-2.0
-6.0
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
μ
A
V
Zero Gate Leakage
(Note 3)
-
25
Drain to Source On-State Volts
(Notes 1, 3)
-
-4.29
Drain to Source On Resistance
(Notes 1, 3)
-
0.650
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= -12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
-200
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
43
Single Event Effects Safe Operating Area
SEESOA
Ni
26
20
Br
37
36
5
-200
Br
37
36
10
-160
Br
37
36
15
-100
Br
37
36
20
-40
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
-120
-80
-40
0
0
10
15
20
25
5
V
GS
(V)
V
D
-160
-200
TEMP = 25
o
C
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
-300
-100
-10
L
DRAIN SUPPLY (V)
-1000
ILM = 10A
300A
1E-4
1E-5
1E-6
-30
100A
30A
1E-3
1E-7
FSYE923A0D, FSYE923A0R
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSYE923A0R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYR-X | 功能描述:化學物質 Syringe & Needle Tips RoHS:否 制造商:3M Electronic Specialty 產品:Adhesives 類型:Epoxy Compound 大小:1.7 oz 外殼:Plastic Tube |
| FSZ.T7.5FT.MC85C | 功能描述:環形推拉式連接器 FIXED RECEPTACLE W. CBL COLLET RoHS:否 制造商:Hirose Connector 產品類型:Connectors 系列:HR10 觸點類型:Socket (Female) 外殼類型:Receptacle 觸點數量:4 外殼大小:7 安裝風格:Panel 端接類型:Solder 電流額定值:2 A |
| FSZ.T7.5FT.MC90C | 功能描述:環形推拉式連接器 FIXED RECEPTACLE W. CBL COLLET RoHS:否 制造商:Hirose Connector 產品類型:Connectors 系列:HR10 觸點類型:Socket (Female) 外殼類型:Receptacle 觸點數量:4 外殼大小:7 安裝風格:Panel 端接類型:Solder 電流額定值:2 A |
| FT 1 D | 制造商:knitter-switch 功能描述: |
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