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參數資料
| 型號： | FTD1014 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Load Switching Applications |
| 中文描述： | 負荷開關應用 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 28K |
| 代理商： | FTD1014 |
FTD1014
No.7020-1/4
Features
Low ON-resistance.
2.5V drive.
Mounting height 1.1mm.
Composite type, facilitating high-density mounting.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7020
FTD1014
Package Dimensions
unit : mm
2155A
[FTD1014]
73001 TS IM TA-2736
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Load S / W Use
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
6
3.0
0.425
0.65
4
0
(
0
0.125
8
5
1
4
0.25
1
0
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
--20
±
10
--2
--15
0.8
1.0
150
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (1000mm
2
0.8mm) 1unit
Mounted on a ceramic board (1000mm
2
0.8mm)
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : D1014 Continued on next page.
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--20V, VGS=0
VGS=
±
8V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
--20
V
μ
A
μ
A
V
S
--1
±
10
--1.4
--0.4
4.2
6
Load Switching Applications
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|---|---|
| FTD2005 | Ultrahigh-Speed Switching Applications |
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| FTD2008 | DC / DC Converter Applications |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FTD1015 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| FTD1028 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| FTD1029 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| FTD110B | 制造商:FCI-CONNECTOR 制造商全稱:FCI connector 功能描述:MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS |
| FTD110C | 制造商:FCI 制造商全稱:First Components International 功能描述:DIODE TRIO WAI TYPE Low forward voltage drop High reliability |
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