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參數資料
| 型號： | FW306 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N- Channel Silicon MOS FET High Speed Switching |
| 中文描述： | N溝道MOS FET的硅高速開關 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 17K |
| 代理商： | FW306 |
Specifications and information herin are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990401TM2fXHD
Absolute Maximum Ratings / Ta=25
°
C
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(Pulse)
Allowable power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
V
V
A
A
W
W
°
C
°
C
Electrical Characteristics / Ta=25
°
C
(N-channel)
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
(P-channel)
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
TENTATIVE
PW
≤
10
μ
S, dutycycle
≤
1%
Mounted on ceramic board
(1000mm
2
0.8mm) 1unit
Mounted on ceramic board
(1000mm
2
0.8mm)
unit
P-channel
30
±
25
--3
--32
N-channel
Features
High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and
4-volt-drive N- / P- channel / MOSFETs.
Low ON-state resistance.
1.7
2.0
150
--55 to
±
150
30
±
25
5
32
min typ max unit
30
1.0
5
V
μ
A
μ
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
V
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on) 1
RDS(on) 2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=1mA , VGS=0
VDS=30V , VGS=0
VGS=
±
20V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=5A
ID=5A , VGS=10V
ID=2A , VGS=4V
VDS=10V , f=1MHz
VDS=10V , f=1MHz
VDS=10V , f=1MHz
See Specified Test
Circuit
IS=5A , VGS = 0
N- Channel Silicon MOS FET
High Speed Switching
8
50
84
460
340
85
13
300
30
50
1.0
100
±
10
2.5
65
120
1.2
FW306
min typ max unit
--30
--1.0
3
V
μ
A
μ
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
V
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on) 1
RDS(on) 2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=--1mA , VGS=0
VDS=--30V , VGS=0
VGS=
±
20V , VDS=0
VDS=--10V , ID=--1mA
VDS=--10V , ID=--3A
ID=--3A , VGS=--10V
ID=--2A , VGS=--4V
VDS=--10V , f=1MHz
VDS=--10V , f=1MHz
VDS=--10V , f=1MHz
See Specified Test
Circuit
IS=--3A , VGS = 0
5
110
200
460
350
80
13
150
30
50
--1.0
--100
±
10
--2.5
160
320
--1.2
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