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參數資料
| 型號： | FX856 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 85K |
| 代理商： | FX856 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
DC/DC Converter Applications
Ordering number:ENN5372A
FX856
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92500TS (KOTO) TA-2770 No.5372–1/5
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2119
[FX856]
Features
· The FX856 composite device consists of following
two devices to facilitate high-density mounting. One
is a P-channel MOSFET that features low ON
resistance, high-speed switching, and low driving
voltage. The other is a shottky barrier diode that
features short reverse recovery time and low forward
voltage.
· Each device incorporated in the FX856 is equivalent
to the 2SJ416 and to the SB07-03P, respectively.
C
C
1 : Gate
2 : Source
3 : No Contact
4 : Anode
5 : Cathode
6 : Drain
(Bottom view)
SANYO : XP6
Mounted on a ceramic board (750mm
2
×
0.8mm)
Tc=25
°
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Marking : 863
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